Beam quality and linewidth enhancement factor of ridge-waveguide tapered diode lasers

Summary form only given. In order to optimize the brightness of these diode lasers, the dependence of the linewidth enhancement factor and of the beam quality on the device structure parameters was investigated. The active In/sub 0.12/Ga/sub 0.88/As quantum well with a thickness of 7 nm is embedded in Al/sub 0.2/Ga/sub 0.8/As waveguides and Al/sub 0.4/Ga/sub 0.6/As cladding layers.