Optimization of MOVPE-grown GaInNAs/GaAs quantum wells for 1.3-/spl mu/m laser applications

The effects of high group-V precursor flows during metal-organic vapor phase epitaxial growth of GaInNAs QWs are investigated. It is shown that photoluminescence line width, wafer uniformity, and sensitivity to growth temperature can be improved using V/III ratios in excess of 2000. Broad area GaInNAs/GaAs SQW lasers with dimensions 100 /spl times/ 820 /spl mu/m/sup 2/ grown under these conditions have threshold current densities as low as 660 kA/cm at 1.26 /spl mu/m emission wavelength.