A compact deep-submicron MOSFET g/sub ds/ model including hot-electron and thermoelectric effects

A compact I/sub ds/ model with physical g/sub ds/ modeling for deep-submicron MOSFETs is formulated based on first-principles momentum/energy balance equations, which simultaneously includes the hot-electron and thermoelectric effects in a unified compact form with one (or two) fitting parameter(s) and one-step extraction. The model has been verified with 0.18-/spl mu/m experimental data with good g/sub ds/ prediction.