Comparision between alicyclic resist platforms in advanced 193-nm and 157-nm lithography

Alicyclic resist platforms have already thought to be imperative in 70-110 nm nodes advanced optical nano-lithography using ArF (193-nm) or F/sub 2/ (157-nm) excimer laser exposure system. In this paper, comparative studies of physical and chemical properties of these alicyclic platforms were reported. We also attempted to clarify the essential difference of their potentials in advanced optical nano-lithography.