Methodology of parameter and coupling ratio extraction for source side injection (SSI) flash cell

We present a new methodology to generate a two-transistor MACRO model of a SSI Flash cell based on a practical cell partitioning and a systematic and rigorous parameter extraction scheme. Through judicious use of TCAD simulation and precise measurement techniques, BSIM3 parameters of the individual transistors and coupling ratios of the cell were extracted, yielding a SPICE-compatible MACRO model for a three-poly split-gate Flash cell.