MOS transistors characterization by split C-V method

Charge stored in the transistor causes capacitive effects that influence transient behavior of MOSFETs. C-V measurement is a fundamental technique for MOSFET characterization. Split C-V measurements are evaluated as a characterization method for MOS transistors. In these measurements, as opposed to total gate capacitance, gate-drain and gate source capacitance are given and, thus, the electron and hole contributions of particular interface areas are separated. This paper shows split C-V measurement results of MOS transistors made in different technologies. The idea was to show that this method is widely applicable. Interpretation of experimental results is confirmed by numerical 2D calculations of the split C-V characteristics in device simulator MINIMOS6 by means of small signal ac analysis and by numerical quasi-static analysis. The influence of irradiation on split C-V characteristics and annealing process after radiation is also shown. Some practical aspects of this method are presented, especially for device parameter extraction.