Study based on the numerical simulation of a 5 kV asymmetrical 4H-SiC thyristor for high power pulses application

This paper focuses on the study of a 5 kV asymmetrical 4H-SiC thyristor and on its junction edge termination protection. Based on a numerical semiconductor simulator, doping level and thickness of the different layers that constitute the device are proposed. Several techniques of periphery protection such as mesa structure, junction termination extension (JTE) and epitaxial guard rings (EGRs) have been studied. Furthermore, we report on the simulation of the finite element thyristor inserted in a circuit for an electromagnetic launching application.