A 0.18 /spl mu/m SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications

A fully modular 0.18 /spl mu/m SiGe:C RFBiCMOS technology is described which has been developed for wireless and gigabit optical communication applications. This technology is based upon a 0.18 /spl mu/m low-power CMOS platform with dual gate oxide MOS devices and 5 layers of Cu metallization. Low Vt CMOS, isolated NMOS, analog BJT and high quality passive devices are integrated for mixed signal and RFCMOS design capability. In addition, a SiGe:C HBT device is integrated for high frequency, low power and low noise RFBiCMOS applications. This technology is supported by digital and analog libraries including 1/f noise & matching characterization, parasitic extraction and memory compilation to fully enable complex mixed-signal system designs.