High-power InAs/InGaAs type-II QW lasers grown on GaAs alternative substrate

This paper presents the results on wafer fusion (GaAs on InP) with a consequent film transfer (InGaAs) from one substrate (InP) to the other (GaAs). This technique of film transfer has permitted a subsequent epitaxial growth of materials with more than 7% of lattice mismatch. A high performance device quantifies the quality of the material grown. The device consisted of 60 periods of InAs/InGaSb/InAs/AlSb type-II quantum wells forming a mid-infrared (MIR) laser. The InGaAs-GaAs alternative substrate allowed the device to be pumped from its backside with a 980 nm diode laser array. Peak MIR (/spl lambda/=4.6 /spl mu/m) power output under 10 /spl mu/s pulses was over 350 mW per facet. With a 500 /spl mu/s pulse length and 500 Hz repetition rate, the device produced over 220 mW of quasi-cw output power at 80 K.