Densification and stress development for the chemical-solution deposition of PZT thin layers on silicon

The evolution of stress is reported, as a function of processing conditions, for the chemical solution deposition of Pb(Zr/sub 0.53/Ti/sub 0.47/)O/sub 3/ (PZT) thin layers on silicon (Si). Shrinkage behavior was determined by in situ ellipsometry, and stress by in-situ laser reflectance measurements, to a maximum temperature of 700/spl deg/C. Densification, thermal analysis, pyrolysis and crystallization data are related to stress development as a function of the sequential build-up of multi-layered structures. A residual tensile stress of /spl sim/125 MPa was measured at room temperature for an amorphous 1-layer film. The magnitude of the stress decreased with increasing number of deposited layers. Observations are made for the crystallization behavior of pyrochlore on Si, and the formation of a lead silicate interfacial layer.