A new extraction method of device parameters for mass production E-T data analysis

A new extraction method of device parameters was developed for mass-production E-T data analysis. This method could be easily introduced to the electrical test measurement without degrading throughput, and extract the effective channel length (Leff) in the saturation region. This parameter has high sensitivity to the halo profile, which was a main parameter of the process variance to realize high performance MOSFETs beyond 0.1 um generation. Based on our method, we have established the E-T data analysis system in mass production.