Instability study of partially depleted SOI-MOSFET due to floating body effect using high energy nuclear microprobes

The instability of partially depleted SOI-MOSFETs due to floating body effects has been investigated using high energy nuclear microprobes. Transient SOI-MOSFET behavior during nuclear particle incidence has also been investigated using two types of three dimensional computer simulation. Suppression of the floating body effects was observed in SOI-MOSFETs with body contact electrodes by nuclear microprobe irradiation. The results of two computer simulators do not coincide each other.