Fabrication technology of a-Si/a-SiGe/a-SiGe triple-junction plastic film substrate solar cells

Device design and deposition conditions of a-Si/a-SiGe/a-SiGe triple-junction solar cells were studied. To optimize their device structure, we applied several technologies such as a-SiO:H window p-layer for top cell, low temperature deposited /spl mu/c-Si p-layer for middle/bottom cells and hydrogen-dilution technique for a-SiGe:H i-layers. As a result, we obtained 1 cm/sup 2/ cell with 11% stabilized efficiency. We found out effective deposition parameters such as increasing both hydrogen-dilution ratio and RF-power for Ge/Si>0.5. In addition, we presented newly designed apparatus for the triple-junction 40 cm/spl times/80 cm solar cells.