Ultrahigh-speed 1.55-/spl mu/m photodiodes on Si with low-loss millimeter-wave waveguides

1.55 /spl mu/m photodiodes with >150 GHz bandwidth were fabricated directly on a silicon substrate. These devices show characteristics similar to the ones fabricated on InP. Furthermore, a new thick dielectric damascene technology is developed to fabricate high-performance high-frequency interconnects on Si. Wafer bonding can be extended to other high-speed devices and the thick dielectric process can be used to improve other devices, such as antennas. Both of these innovations together should make it possible to integrate complex Si VLSI-based systems with millimeter-wave microwave active and passive components and optoelectronic devices.