Gas source MBE grown InGaAs(P)N/InP long wavelength (/spl lambda/>1.65 /spl mu/m) photodetectors using a solid as source

Summary form only given. We have recently demonstrated that incorporation of nitrogen into InGaAs may extend the wavelength of InP based photodetectors beyond 1.65 /spl mu/m and reported the first lattice matched InGaAsPN based photodetectors on InP with cutoff wavelengths extending beyond 1.65 /spl mu/m. We propose that the relatively low quantum efficiency and high dark current for these InGaAsPN detectors was due to the N-H complex formation and local strain induced defects. These results indicate that high temperature annealed InGaAsPN materials grown by solid source As are promising for use in detectors with response /spl lambda/<5 /spl mu/m.