Low-temperature growth of high-integrity silicon oxide films by oxygen radical generated in high-density krypton plasma

This paper focuses attention on the electrical properties of silicon oxide films grown by Kr-O/sub 2/ mixed high-density and low electron temperature microwave-excited plasma at 400/spl deg/C. They exhibit high growth rate, high dielectric strength, high charge-to-breakdown, and low interface traps and bulk charge enough to replace thermally grown silicon oxide.