Ion implantation into silica fibers and metal wires

Boron ions were uniformly implanted into silica fibers, and Cu and Al wires of /spl sim/125 /spl mu/m /spl phi/. Implantation energy was 100 keV and nominal dose was 1/spl times/10/sup 16//cm/sup 2/. Samples were rotated on their axes for uniform implantation. Boron depth profiles were measured by the Secondary-Ion Mass Spectroscopy and was compared with calculated results. Sample temperature rise during implantation was estimated by thermo-couple measurement and its result was compared with calculated results.