An unscanned, mass-analyzed ion implantation system for flat-panel displays

Ion implanters for flat panel display implantation have hitherto been characterized by un-analyzed beams and uncontrolled beam uniformity. We present data on the MDI-100, the first high-current ion implanter for flat panel display which utilizes a mass-analyzed dc ribbon beam spanning panels of up to 620 mm in the smaller dimension. The system is capable of up to 20 mA of pure P/sup +/ or 10 mA of pure B/sup +/, and the energy range is from 10 to 100 KeV. Uniformity is directly measured and automatically controlled. A beam profile is always available to quantify the uniformity of the implant. The dopant dose is controlled with a precision of <1%. High throughput is possible at high doses, and good uniformity is maintained down to very low doses such as threshold adjust applications, etc.