Fundamental oscillation up to 1.31 THz in thin-well resonant tunneling diodes

Room-temperature fundamental oscillation of up to 1.31 THz was achieved in thin-well resonant tunneling diodes integrated with planar slot antennas. The output powers were ~10 μW at 1.31 THz and around 30 nW in the 0.8-1.1 THz region. This high frequency oscillation with relatively high output power is attributed to a reduction in the intrinsic delay and an increase in the widths of current density and voltage of the negative differential conductance region due to the thin well structure.