Novel cell isolation technique for the analysis of CMOS SRAM cellcold failure
Yit-Wooi Lim; Teong-San Yeoh
Semiconductor Electronics, 1998. Proceedings. ICSE apos;98. 1998 IEEE International Conference on
Volume , Issue , 1998 Page(s):64 - 69
Digital Object Identifier 10.1109/SMELEC.1998.781151
Summary:CMOS SRAM cell cold failure analysis is not easily performed under
a room temperature environment. However, by using the signature analysis
method, the transistor failure cell can be identified by directly
measuring the transistor parameters from the isolated SRAM cell. The
cell isolation technique for signature analysis is sensitive enough to
capture the abnormal electrical signature of the SRAM cell cold failure.
The technique was used on the analysis of SRAM cell cold failure from a
2-layer metal fab process. The SRAM cell and its transistors were
physically and electrically isolated without any problem. The failure
signature of the SRAM cell cold failure which failed stuck at
“1” at a single bit address during testing, was successfully
analyzed. N+ drain junction leakage and threshold voltage degradation
was identified as the root cause of the cold failure
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