Numerical analysis of intrinsic capacitances for a fully depleted SOI MOSFET

Based on the intrinsic capacitances model of bulk MOSFETs, a counterpart equivalent circuit model for the fully depleted SOI MOSFET is developed by emphasizing the structural uniqueness of the device. Under quasistatic operation condition, the intrinsic capacitances valid for all regions of operation, including weak and moderate inversion, are derived and computed by using the theories proposed recently [1]. The numerical simulations for both the depleted and accumulated back surfaces are presented, and the results are compared with those from the experiment and strong inversion theory.