Parameter extraction of SOILDMOS based on the HISIM-HV model

As an RF power device, SOILDMOS has a huge market demand and broad development prospects. In this paper, we conduct extensive measurement of the SOILDMOS chip using the vector network analyzer, microwave probe station, semiconductor parameter analyzer. The measuring results are obtained with Agilent IC-CAP 2008. With these results, SOILDMOS can be modeled based on the HiSIM-HV model. The parameter extraction and curve fitting are carried out with the IC-CAP tool. The experimental results show that the parameters extracted based on the HiSIM-HV model perform well.