Ga0.96Al0.04Sb Implanted Avalanche Photodiode; Perspective for a 2.55 μm SAM APD Photodetector

Be
⁺
implantation into Liquid Phase Epitaxial n Ga
0.96
Al
0.004
Sb has been used in order to study the photodetection characteristics of the resulting p
⁺
/n diode, in the multiplication region. The great difference observed between the multiplication in the respective cases of pure electron and hole photoinjections confirms that the room temperature ionization coefficients ratio is very different from unity making this material very promising for an antimonide based Separated Absorption Multiplication Avalanche Photodiode. (SAM APD).