Formation of (TixW1-x)Si2/(TixW1-x)N contacts by rapid thermal silicidation

The formation of (Ti
x
W
1-x
)Si
2
/(Ti
x
W
1-x
)N by rapid thermnal processing of Ti
x
W
1-x
on Si in an N
2
ambient is investigated. A distinct snowploughing of As atoms is observed during silicide formation. The diffusion barrier properties of the (Ti
x
W
1-x
)Si
2
/(Ti
x
W
1-x
)N stack in contact with Al is investigated upon post-metal annealing.