A Scalable Single Poly EEPROM Cell for Embedded Memory Applications

An increasing number of Integrated Circuits requires the embedding of a limited amount (up to 16-64 kbits) of EEPROM memory. For this application, low process complexity, robust structure and good reliability are more important than small cell size. In this paper we present the design and characterization of a single poly EEPROM cell, optimized for embedded applications, and characterized by a good shrink potential. A cell area of 68.7μm
²
has been obtained in 0.7μm technology, and electrical characterization has shown the possibility of achieving a programming time of less than 1 ms, while an endurance of more than 10 million cycles has been achieved at 125°C, with a programming time of 2 ms. By further shrink of the same basic layout, cell areas of 55μm
²
and 44μm
²
have been obtained, and the similar programming and endurance performances have been demonstrated.