Electrical Properties of Oxynitride Layers Obtained by Annealing of Nitrogen Doped Silicon

A new method for the obtaining of thin oxynitride insulator is described: a nitrogen doped silicon layer is used as a nitrogen atoms source for the nitridation of a buried oxide layer. Capacitor structures are made and electrical characterization by C(V) and I(V) of the oxynitride films are presented and analysed.