0.25 μmCMOS with N2O nitrided gate oxides

For a 0.25 μm CMOS process a simple and compatible two-step N
₂
O nitridation technology was developed. High quality dielectrics were obtained for both surface channel PMOS and NMOS devices. The use of the nitridation technology improves the gate oxide quality considerably. Furthermore the technology enables the use of BF
₂
⁺
for gate and drain doping of the PMOS devices. The hot carrier degradation measured at worst case condition (V
_ga
= l/2V
_ds
), results in a slight improvement of lifetime of PMOS devices.