A New Non-Quasi-Static SOI MOSFET Model Dedicated to Analog Circuit Simulation

A new Non-Quasi-Static (NQS) model of SOI-MOSFETs is presented in this paper. This model, based on the charge sheet approach, is valid for all regions of operation. Excellent agreement is found with 2D device simulations both under static and fast transient conditions. This new model proves to be useful to simulate analog circuits where NQS phenomena have a first order effect on circuit performance.