Effect of In and N incorporation on the GaInNAs VCSELs.

We study the effect of In and N content in GaInNAs material system for application of 1.3 µm vertical cavity surface emitting lasers (VCSEL). The emission wavelength are successfully observed at 1.303 µm wavelength. VCSEL sample with Ga
0.58
In
0.42
As QW give the highest output power (0.5694 mW) with threshold current 11mA.