Near state-of-the-art power in p+-n-n+D-band IMPATT diode on a wafer with ramped n-n+interface

Fabrication of near state-of-the-art (P
0
= 110 mW, η = 4.85 percent p
⁺
-n-n
⁺
D band (f = 124 GHz) Si IMPATT diode on a wafer with ramped n-n
⁺
interface is described. Introduction of a critical annealing step, prior to p
⁺
diffusion, in the fabrication sequence of the diode has been found to yield the above results. Possible reasons for power and efficiency enhancement has been discussed.