On the relation between microwave series resistance, capacitance, and output power of IMPATT diodes

Measurements at X-band of capacitance C, microwave series resistance R, and CW output power P, on Si IMPATT diodes with epitaxial layers of varying thickness are used to show that P = (constant)/(RC
²
). This relation is known from the large-signal theory of the ideal Read structure, but is found to be valid far beyond its theoretical limits.