Ferroelectric and dielectric properties of Pb(Zr,Ti)O3 thin film capacitors

Ferroelectric thin films with compositions PbZr
_0.52
Ti
_0.48
O
₃
(PZT) have been processed by pulsed laser deposition on the SrRuO
₃
(110)/YSZ(001)/Si(001) substrates. The obtained films are polycrystalline, with perovskite structure and the (110)-dominant orientation. The columnar structure was observed by cross-sectional scanning electron microscopy (SEM). The polarization hysteresis loops (P-E), capacitance-voltage (C-V) and dielectric properties with different frequency were studied. The 250 nm thick PZT film showed the remnant polarization of 25 muC/cm
²
and coercive electric field of 34.1 kV/cm at 200 kV/cm amplitude and 1 kHz frequency. The dielectric constant and dissipation factor were measured to be 1255 and 0.04 at room temperature and 10 kHz frequency, respectively. The existence of the interfacial dead-layer at the electrode-film interface can be evaluated from capacitance dependence on the film thickness.