High-κ Ta2O5 film for resistive switching memory application

We report a novel nonvolatile resistive switching memory with a Cu/Ta
₂
O
₅
/TiN structure. This memory device has low power (100 muA/1.5 V), large threshold voltage of 0.8 V, moderate endurance of 10
²
cycles, and excellent retention with high resistance ratio of 2.4times10
²
after 10
⁵
s (26 hours). Furthermore, the threshold voltage can be increased by both the thickness of Ta
₂
O
₅
solid electrolyte and annealing temperatures, which can make easier to design the memory circuit.