Two dimensional numerical simulation of temperature dependency of MOSFET out-put characteristics

In this paper we present the impact of temperature on out-put MOSFET characteristics over a wide range of temperature from 300°K to 500°K, by using Femlab and freefem+ tools. We have studied in particular current-voltage characteristics (ID-VDS and ID-VGS), longitudinal electric field, and the variation of drain current with temperature. We have observed a good agreement between the model of Femlab and Freefem+ tools. Two-dimensional numerical simulations are used to describe significant physics phenomena in the characteristics for 0.25 μm gate length NMOSFET transistor.