Characterization of Intrinsic Capacitances of Small-Geometry MOSFET's

Precise characterization. of intrinsic gate capacitances of small geometry MOSFET's is needed for accurate prediction of the performance of VLSI MOS circuits. Recently. several capacitance measurement schemes have been reported r I]-[2], but special on-chip circuitries are required. In this paper, a new and simple measurement technique is described, which requires only standard test transistors. Very high accuracy (better than 0.5fF) and resolution (better than. 0.2fF) have been achieved. Also, the direct-on-wafer measuring scheme can be easily incorporated into an automatic characterization system.