Theoretical analysis of XtreMOS™ power transistors

This work provides a new theoretical approach addressed to the XtreMOS
^TM
and equivalent structures. An analytical sR
_on
xBV
_dss
model is provided to demonstrate the superior electrical performance of XtreMOS
^TM
structure in the domain of the high power MOSFETs at medium voltage capability (50-200 V). Moreover, geometrical and technological parameters can be easily optimized by means of simple expressions. In order to support and validate the theoretical approach, numerical simulation and experimental data are included.