Impact of source to drain tunneling on the Ion/Ioff trade-off of alternative channel material MOSFETs

In this paper, the light effective masses of the Ge and GaAs bandstructure, responsible for enhanced injection velocities compared to Si and s-Si are also responsible for a significant increase of SDT. When SDT is taken into account, and for devices with negligible SCEs, it has been found that Si and especially s-Si, offers a much better l
_on
/l
_off
trade-off than Ge and GaAs.