1.55 μm tensile strained GalnNAs/InP laser diodes performances

In this paper, the performance of GaInNAs/InP quantum well (QW) laser diodes emitting at 1.55 μm is reported. The measured and calculated modal gains are in good agreement for temperatures ranging from 20 to 80°C. Furthermore, the temperature evolution of calculated differential gain is in good agreement with the one deduced from relative intensity noise measurements. GalnNAs based laser diodes show good performances despite a recombination current dominated by Auger processes. Resonant frequencies larger than 4 GHz are measured with a differential gain of the order of 0.7 10
^-15
cm
²
at room temperature.