A 3.5 GHz 25 W Silicon LDMOS RFIC power amplifier for WiMAX applications

This paper presents a 25 W Silicon LDMOS 2 stage RF integrated circuit (IC) designed for WiMAX at 3.5GHz. This IC is capable of handling the full 3.3 to 3.8 GHz band with flat RF performances. This paper details RF performances in the 3.4 to 3.6 GHz band. Under a 1 tone CW stimulus, this power amplifier delivers 29 W with a power added efficiency of 36.7% and 26 dB linear gain. Under a 1 carrier WiMAX signal and at 36 dBm average output power, the device has a RCE better than -33.5 dBc and a 14% drain efficiency typical.