Exciton transfer among interface islands in growth-interrupted single quantum wells

Summary form only given. Photoluminescence measurements within the temperature range 4.1-155 K are made on five spatially separated GaAs-GaAlAs single quantum wells, with nominal widths of 4, 6, 11, 19, and 25 monolayers, and with growth interruption of 90 seconds at each interface. The excitation power is 5 mW of Ar/sup +/ laser.