Ku-band 10 W high efficiency HJFET power amplifier

This paper describes a record power performance of a Ku-band power amplifier fabricated with a one-chip 0.45 /spl mu/m gate GaAs-based heterojunction FET (HJFET). The developed HJFET amplifier with 16.8 mm gate periphery exhibited a 40.1 dBm (10.2 W) output power with 50% power-added efficiency (PAE) and 9.5 dB linear gain at 12 GHz. This is the highest PAE, gain and output power combination achieved by a single FET power amplifier at this frequency.<
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