10-nm channel length pentacene transistors
Lee, J.B.; Chang, P.C.; Liddle, J.A.; Subramanian, V.
Electron Devices, IEEE Transactions on
Volume 52, Issue 8, Aug. 2005 Page(s): 1874 - 1879
Digital Object Identifier   10.1109/TED.2005.851845
Summary: Organic thin-film transitors (OTFTs) were fabricated with channel lengths as small as 10 nm and an operating voltage of V/sub DD/=-0.3 V using e-beam lithography. For sub-200-nm channel lengths, scaling L downwards resulted in increased on-current, decreased I/sub on//I/sub off/ ratio, V/sub T/-rolloff, and drain-induced barrier lowering. These trends are correlated with device topology, electrostatics, and thin-film morphology. Nanoscale OTFT are interesting both as a means of studying intrinsic electrical properties of organic materials and as a possible route toward increasing on-current in organic devices. This paper sheds light on many of the issues encountered when shrinking organic devices, providing insight into approaches for optimizing nanoscaled OTFT.

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