Weave patterned organic transistors on fiber for E-textiles
Lee, J.B.; Subramanian, V.
Electron Devices, IEEE Transactions on
Volume 52, Issue 2, Feb. 2005 Page(s): 269 - 275
Digital Object Identifier   10.1109/TED.2004.841331
Summary: Flexible transistors were formed directly on fibers in a novel weave-masking fabrication process. Pentacene fiber transistors exhibit mobilities of >0.5 cm/sup 2//V-s measured at 20 V V/sub DD/ and operate stably under a wide range of flexion stress. Devices are defined and positioned solely by a weaving pattern, meaning that simple circuits could potentially be directly built into fabric during manufacturing. This development offers a novel approach for providing information routing within fabric, which is currently a major hurdle in electronic textile development.

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