Optimizing the Performance of Carbon Nanotube Transistors

A numerical study of carbon nanotube field effect transistors is presented. The non-equilibrium Green's function formalism was employed to investigate the static response. Based on the quasi-static approximation, the dynamic response has been determined. The effect of the gate-source and gate-drain spacers on the static and dynamic response of the device was studied. Simulation results suggest that both the dynamic and static characteristics of the device can be improved by appropriately designing the gate-source and gate-drain spacers.