Highly Tensile Strained Silicon Carbon Phosphorus Alloys Epitaxially Grown into Recessed Source Drain Areas of NMOS devices

Growth rates up to 82 nm/min (at 550degC) led to films incorporating up to 3.6% substitutional carbon according to Vegard's law; (2.8% after (Kelires, 1998)) and an alpha/epi growth rate ratio of 1. The films were fully strained with perpendicular lattice constants of down to 5.363 Aring and displayed stress well above 2 GPa. Moreover, these films could be heavily doped with P and led to resistivities as low as 0.5 - 1.5 mOmegacm