Ultrasonic defect manipulation in irradiated silicon

It is shown that room temperature ultrasonic defect manipulation (UDM) can significantly reduce the concentration of radiation defects in high resistivity silicon. Secondary ion mass spectroscopy reveals that oxygen- and hydrogen-related chemical reactions are activated in silicon by UDM at room temperature. This ultrasonically stimulated activation supports changes in bulk conductivity of the sample and a migration of impurities to the surface.