NLDMOS RF optimization guidelines for wireless power amplifier applications

LDMOSFET optimization for RF power applications is discussed. Starting from a quite standard transistor, a new architecture has been developed to reach high RF performances without sacrificing DC characteristics. The parasitic elements affecting the RF performances have been identified and reduced. The optimized device presents the following performances: BVds=15V, W.Ron lower than 3 Ohm.mm and f/sub T/ larger than 30 GHz.