Channel material optimization for the ultimate planar and nanowire mosfets: a theoretical exploration

Modem MOSFETs have channel lengths below 50 nm, and billion transistor logic chips have arrived. Moore's Law continues, but the end of MOSFET scaling is in sight. Many researchers are exploring new materials and device structures to push MOS technology towards fundamental limits. MOSFETs with strained silicon, SiGe, or even III-V channels are possibilities, as are one-dimensional channels made from nanowires or nanotubes.