Digital ICs for high data rate/high voltage swing applications in a production-near SiGe technology

This paper reports on various digital ICs fabricated in a 0.35 /spl mu/m/200GHz-f/sub T/ production-near SiGe bipolar technology with a V/sub CEO/ of 1.8 V. A 2:1 time-division multiplexer with high differential output voltage swing of 2/spl times/2 V/sub pp/ operating at a data rate of 40 Gb/s is described. The circuit shows rise and fall times of about 11 ps and consumes 1.65 W. Furthermore a 45 Gb/s D-type flip-flop with high input sensitivity and a power consumption of 0.55 W is presented. Additionally a high-speed 2:1 multiplexer capable of processing data rates higher than 80 Gb/s is reported. It consumes 0.75 W.