Avalanche noise in In/sub 0.53/Ga/sub 0.47/As avalanching regions

Pure electron injection multiplication noise of In/sub 0.53/Ga/sub 0.47/As has been measured on three In/sub 0.53/Ga/sub 0.47/As diode with avalanche widths of 1.8 /spl mu/m, 3.2 /spl mu/m and 4.8 /spl mu/m. Very low excess noise has been measured and the associated electron to hole ionisation coefficient ratio is from 3.3 to 5. The results confirm the previously reported large ionisation coefficient ratios at fields between 155 kVcm/sup -1/ and 310 kVcm/sup -1/.